v23990-p717-gxx-pm preliminary datasheet flow90con 1 1600v/35a 3~ phase input rectifier wit h or witho u t brc *optional hal f controll ed compatible with flow 90pack 1 support designs with 90 mounting angle between heatsink and pcb clip-in pcb mounting motor drives servo drives v23990-p717-g-pm v23990-p717-gxx-pm half controlled tj=25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v t h =80c 39 t c =80c 53 t h =80c 44 t c =80c 67 maximum junction temperature t j max 150 c input rectifier thyristor repetitive peak reverse voltage v rrm 1600 v sine,d=0.5 t h =80c 36 t j =t j max t c =80c 48 surge forward current i fsm 360 a i 2 t 650 a 2 s t h =80c 56 t c =80c 84 maximum junction temperature t j max 150 c p tot power dissipation per diode i 2 t power dissipation per thyristor p tot i fav input rectifier diode forward average current i2t-value forward current per diode surge forward current a w a w tj=45c t j =t j max t p =10ms a types i2t-value maximum ratings i fav a 2 s i fsm condition dc current 1800 t j =45c t j =t j max features flow 90 housing target applications schematic t p =10ms 600 copyright by vincotech 1 revision: 2
v23990-p717-gxx-pm preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition brc transistor t h =80c 18 t c =80c 23 t h =80c 47 t c =80c 66 t sc t j 150c 10 s v cc v ge =15v 1200 v brc. inverse diode t h =80c 8 t c =80c 8 t h =80c 20 t c =80c 30 brc. diode t j =25c t h =80c 13 t c =80c 17 t h =80c 26 t c =80c 40 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm 1200 15 75 20 150 1200 6 clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) c storage temperature t stg -40?+125 c peak repetitive reverse voltage c maximum junction temperature t j max 150 i cpuls t j =t j max i c v ce power dissipation per diode p tot t j =t j max t j =t j max dc forward current i f repetitive peak forward current i frm t p limited by t j max v rrm v ge i f t j =t j max t j max p tot w a w v c v a peak repetitive reverse voltage repetitive peak forward current i frm a a t j =t j max t p limited by t j max dc collector current power dissipation per igbt repetitive peak collector current gate-emitter peak voltage maximum junction temperature short circuit ratings brc. inverse diode t j =t j max v a v c w a collector-emitter break down voltage t p limited by t j max 1200 maximum junction temperature t j max 150 t c =25c v rrm dc forward current p tot copyright by vincotech 2 revision: 2
v23990-p717-gxx-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 0,8 1,21 1,5 t j =125c 1,18 t j =25c 0,92 t j =125c 0,82 t j =25c 0,01 t j =125c 0,01 t j =25c 0,02 t j =125c thermal resistance chip to heatsink per chip r thjh 1,58 thermal resistance chip to case per chip r thjc 1,04 t j =25c 1 1,41 1,8 t j =125c 1,48 t j =25c 0,97 t j =125c 0,85 t j =25c 12,49 t j =125c 17,85 t j =25c 0,05 t j =150c 8 ig=0,5a t j =25c 2 vd=1/2 vdrm t j =125c t j =25c t j =125c tbd. vd=2/3 vdrm linear volta g e rise 1000 vd=2/3 vdrm ig=0,3a; f=50hz 500 t j =25c t j =125c 200 t j =25c 100 t j =125c ig=0,3a t j =25c 150 t p =10 s s s v/ s ma s ma v 82 95 1808 v ma k/w 1200 600 25 ma na ns 15 20 mws 0 ? 0 f=1mhz 15 15 0 40 27 100 thermal grease thickness 50um = 0,61 w/mk tp=200 s vd=6 vd=6 1600 35 1200 vd=6 v thermal grease thickness 50um = 0,61 w/mk i ges rgoff=16 ? rgon=32 ? vce=vge circuit commutated turn-off time tp=200 s vd=6 v holding current i h t q vd=2/3 vdrm gate controlled delay time t gd vd=2/3 vdrm threshold voltage (for power loss calc. only) v m ? 35 35 v v to input rectifier thyristor forward voltage v f reverse current i r k/w v v ? ma 42 42 42 characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t input rectifier diode value conditions v gt gate trigger voltage gate non-trigger voltage gate trigger current i l latching current v gd i gt critical rate of rise of off-state voltage (di/dt)cr r t i r (dv/dt)cr t gr slope resistance (for power loss calc. only) critical rate of rise of on-state current gate controlled rise time reverse current gate non-trigger current brc transistor k/w nc c oss e on output capacitance c rss c ies integrated gate resistor 960 i gd vd=2/3 vdrm thermal grease thickness 50um = 0,61 w/mk reverse transfer capacitance e off turn-on energy loss per pulse turn-on delay time t f fall time t d(on) t r r gint turn-off energy loss per pulse q gate gate charge input capacitance rise time turn-off delay time t d(off) gate-emitter leakage current i ces v ge(th) v ce(sat) collector-emitter saturation voltage collector-emitter cut-off incl diode gate emitter threshold voltage 0,001 25 25 25 155 tj=25c tj=25c pf v v copyright e \ vincotech 3 revision: 2
v23990-p717-gxx-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditions t j =25c 1 1,6 2,2 tj=125c 1,57 thermal resistance chip to heatsink per chip r thjh 3,49 k/w thermal resistance chip to case per chip r thjc 2,30 k/w t j =25c 1 1,62 2,2 t j =125c 1,67 t j =25c 250 t j =125c t j =25c 17 t j =125c 17 t j =25c 332 t j =125c 505 t j =25c 1,79 t j =125c 2,78 di ( rec ) max t j =25c 495 /d t t j =125c 210 t j =25c 1,79 t j =125c 2,78 thermal resistance chip to heatsink per chip r thjh 2,65 thermal resistance chip to case per chip r thjc 1,75 300 300 7,5 7,5 3 rgon=32 ? rgon=32 ? 15 thermal grease thickness 50um = 0,61 w/mk brc. diode 15 diode forward voltage reverse leakage current thermal grease thickness 50um = 0,61 w/mk reverse recovery energy v f i r t rr q rr e rec reverse recovery time i rrm diode forward voltage v f peak rate of fall of recovery current peak reverse recovery current reverse recovered charge brc. inverse diode 7,5 k/w mws c v v a ns a/ s a copyright e \ vincotech 4 revision: 2
v23990-p717-gxx-pm preliminary datasheet package outline and pinout outline pinout c opyright by vincotec h 5 revision: 2
v23990-p717-gxx-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. c opyright by vincotec h 6 revision: 2
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